| PART |
Description |
Maker |
| SLD343YT-24 SLD343YT-25 |
807 nm, LASER DIODE M-288, 9 PIN
810 nm, LASER DIODE M-288, 9 PIN
|
RECOM Electronic GmbH
Cypress Semiconductor Corp.
|
| SLD344YT-24 SLD344YT-25 |
807 nm, LASER DIODE M-288, 9 PIN
810 nm, LASER DIODE M-288, 9 PIN
|
RECOM Electronic GmbH
Cypress Semiconductor Corp.
|
| 30KPA90CA OKPA170CA OKPA180CA OKPA198CA OKPA216CA |
STAND-OFF VOLTAGE-30 TO 288 Volts 30000 Watt Peak Pulse Power
Diode TVS Single Bi-Dir 180V 30KW 2-Pin Case P600 T/R
STAND-OFF VOLTAGE-30 TO 288 Volts 30000 Watt Peak Pulse Power
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conduct...
New Jersey Semiconductors
|
| TC554001FTL-10V TC554001FTL-85V |
524, 288 words x 8 bit static RAM, access time 100ns
524, 288 words x 8 bit static RAM, access time 85ns
|
TOSHIBA
|
| AM29LV800T AM29LV800T-100 AM29LV800T-120 AM29LV800 |
8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 3.0 Volt-only, Sectored Flash Memory
Am29LV800 - 8 Megabit (1.048.576 x 8-Bit/524.288 x 16-Bit) CMOS 3.0 Volt-only. Sectored Flash Memory
8 Megabit (1/048/576 x 8-Bit/524/288 x 16-Bit) CMOS 3.0 Volt-only/ Sectored Flash Memory
512K X 16 FLASH 3V PROM, 100 ns, PDSO48
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
SPANSION LLC
|
| AM29F800T-70 AM29F800T-90 AM29F800T-150SEB AM29F80 |
8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 8兆位,048,576 x 8-Bit/52488 x 16位）.0伏的CMOS只，扇区擦除闪存
8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 16 FLASH 5V PROM, 90 ns, PDSO48
8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 16 FLASH 5V PROM, 90 ns, PDSO44
8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 16 FLASH 5V PROM, 150 ns, PDSO44
8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 16 FLASH 5V PROM, 70 ns, PDSO48
8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 16 FLASH 5V PROM, 70 ns, PDSO44
8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 16 FLASH 5V PROM, 150 ns, PDSO48
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| HM514800LJP-7 HM514800LJP-10 HM514800LZP-10 HM5148 |
70ns; V(cc): -1 to 7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory
100ns; V(cc): -1 to 7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory
|
Hitachi Semiconductor
|
| ZL50212 |
288 Channel Voice Echo Canceller
|
ZARLINK[Zarlink Semiconductor Inc]
|
| B39291-B5019-H810 B5019 |
SAW Components Low-Loss Filter 288,25 MHz
|
EPCOS[EPCOS]
|
| HX424C12PB2K4-16 |
DDR4-2400 CL12 288-Pin DIMM
|
List of Unclassifed Man...
|
| HX424C12SB-4 |
DDR4-2400 CL12 288-Pin DIMM
|
List of Unclassifed Man...
|
|
